Photo Reflective Sensor

Introduction

http://www.seeedstudio.com/depot/images/product/rs081.jpg

This is a reflective sensor combines a GaA1As infrared light emitting diode with a high sensitive Darlington phototransistor in a mini package.

Features

  • Compact

  • High performance

  • High output

  • Easy to mount on PCB

  • Widely applicable

Application Ideas

  • Timing sensors

  • Edge sensors

  • Micro floppy disc drivers

  • Level sensors of liquid

Specification

Maximum Ratings (Ta=25℃)

Item Symbol Rating Unit
Input Power Dissipation PD 100 mW
Reverse Voltage VR 5 V
Forward Current IF 50 mA
Pulse Forward current * 1 IFP 1 A
Output Collector Power Dissipation Pc 100 mW
Collector Current Ic 20 mA
C-E Voltage VCEO 30 V
E-C Voltage VECO 5 V
Operating Temperature Topr -10~+65 ℃
Storage Temperature Tstg -25~+85 ℃
Soldering Temperature *2 Tsol 260 ℃

Electro-optical Characteristics (Ta=25℃)

Item Symbol Conditions Min Typ Max Unit
Input Forward Voltage VF IF=20mA 1.2 1.6 V
Reverse Current IR VR=5V 10 µA
Capacitance Ct V=0V, f=1kHZ 25 pF
Peak Wavelength λP 940 nm
Output Collector Dark Current ICEO VCE=20V 0.1 µA
Light Current IL VCE=5V,IF=20mA 50 µA
Leakage Current ICEOD VCE=5V,IF=10mA 1 µA
Switching Speeds Rise Time tr Vcc=5V, Ic=1mA, RL=1kΩ 15 µsec
Fall Time tf 15 µsec

Mechanic Dimensions

Help us make it better

Welcome to the new documentation system of Seeed Studio. We have made a lot of progress comparing to the old wiki system and will continue to improve it to make it more user friendly and helpful. The improvement can't be done without your kindly feedback. If you have any suggestions or findings, you are most welcome to submit the amended version as our contributor via Github or give us suggestions in the survey below, it would be more appreciated if you could leave your email so that we can reply to you. Happy Hacking!